Fault detection and estimation of wafer warpage profile during thermal processing in microlithography
نویسندگان
چکیده
Wafer warpage is common in microelectronics processing. Warped wafers can affect device performance, reliability and linewidth control in various processing steps. We proposed in this paper an in-situ approach for estimating wafer warpage profile during the thermal processing steps in microlithography process. A programmable multizone thermal processing system is developed to demonstrate the approach. Early detection will minimize cost and processing time. Based on first principle thermal modeling and system identification techniques, we are able to estimate the profile of a warped wafer from available temperature measurements. Experimental results demonstrate the feasibility and repeatability of the approach. The proposed approach is applicable to other semiconductor substrates.
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